MRF8S9260HR3 MRF8S9260HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,
IDQ
= 1700 mA, Pout
= 75 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
?D
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
18.8
36.0
6.3
--39.5
940 MHz
18.7
37.0
6.2
--38.6
960 MHz
18.6
38.5
5.9
--37.1
?
Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
?
Typical Pout
@ 1 dB Compression Point
?
260 Watts CW
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
?
Optimized for Doherty Applications
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
?C
Case Operating Temperature
TC
150
?C
Operating Junction Temperature
(2,3)
TJ
225
?C
CW Operation @ TC
=25?C
Derate above 25?C
CW
280
1.5
W
W/?C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80?C, 75 W CW, 28 Vdc, IDQ
= 1800 mA
Case Temperature 80?C, 265 W CW, 28 Vdc, IDQ
= 1100 mA
R?JC
0.37
0.31
?C/W
1. Exceeds recommended operating conditions. See
CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S9260H
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
920--960 MHz, 75 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S9260HR3
MRF8S9260HSR3
CASE 465C--03
NI--880S
MRF8S9260HSR3
CASE 465B--04
NI--880
MRF8S9260HR3
?
Freescale Semiconductor, Inc., 2009, 2012.
All rights reserved.
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